RUBY
NANDINI
GHOSH Research
Associate Professor Department of Physics
and Astronomy
Michigan State University
Tel: (517) 884-5585 EDUCATION
Thesis: "Spin Dependent Transport in a Silicon
Two-Dimensional
Electron Gas"
Thesis: "Monolithic
Integration of
GaAs Light-Emitting Diodes and Si Field-Effect Transistors"
PROFESSIONAL EXPERIENCE Research Associate Professor, Dept. of Physics, Michigan State University 2004 to present
Research
Faculty, Center
for Sensor Materials,
“Wide bandgap semiconductor
devices”
Catalytic
gate silicon carbide devices have been developed for detection
of hydrogen containing
gases
in high
temperature, harsh environments. Studying the defect
dynamics of interfaces in
metal-
dielectric−SiC
field−effect structures.
Demonstrated ms
response time for sensors operating at 600 °C
during continuous
operation for several weeks with negligible degradation in
performance.
“Fiber optic oxygen sensing”
Developed a reflection
mode fiber probe operating in a 0 - 20% gaseous oxygen
atmosphere by
utilizing the quenching
of the phosphorescence from molybdenum chloride clusters by 3O2. Studying
the photophysics of Mo-clusters
for spatially (≤50 µm) and temporally (≤1s) resolved
measurements.
Demonstrated 24/7
outdoor monitoring of dissolved oxygen in aqueous biological
media.
“Remote identification of
chemical components in structural fires
Developing a library of
chemical burn signatures of the major constituents present in
structural fires.
for remote, wireless
fire safety applications.
Member
of Technical Staff,
Planar Lightguide Circuit
Research Department, Lucent Technologies ,
“Er3+ - doped planar
waveguide amplifier”
Investigated
the integration of active optical elements with passive silica
optical
circuits.
Demonstrated an Er3+
waveguide amplifier, pumped by a semiconductor diode laser,
with the lowest
threshold to date of 8mW
and a net gain of 4.5 dB.
Postdoctoral
Fellow National
Institute of
Standards and Technology,
Fundamental Electrical
Measurements Group, Electricity Division
"Precision measurements
with single electron tunneling structures"
Developed a new
technique to measure the electronic charge e, by counting
electrons on a
capacitor.
Fabricated single
electron tunneling (SET) devices.
Investigated using an SET electrometer in a
capacitance bridge to
measure the leakage rate of a capacitor at 10 mK.
Graduate
Assistant, Research Assistant, Laboratory Atomic & Solid State Physics 1986 to 1991
Advisor:
Robert H. Silsbee Research Assistant, Department of Electrical Engineering 1983 to 1986
Advisor:
Joseph M. Ballantyne SYNERGISTIC
ACTIVITIES
Meetings:
Tech.
program Committee, IEEE Sensors 2007, 2004 and 2003
Tech.
program Committe, 2008 Int. Mtg. Chemical Sensor,
Reviewer
National
Research Council Review Panel for the National Institute of
Standards
Technology
2004-2008
Referee:
IEEE
Photonics Technology Letters, Cryogenics, IEEE Sensors
Journal, IEEE Trans.
Elec. Device
J. Appl. Physics RECENT COLLABORATIONS
Dr. Jay Grate,
Prof. Indrek Wichman,
Dr. James Wynn, MBI
Prof. Chris Xu, TEN RELEVANT PUBLICATIONS R. N. Ghosh, P.
A. Askeland, S. Kramer and R. Loloee, “Optical dissolved
oxygen sensor
utilizing molybdenum chloride cluster phosphorescence”, App.
Phys. Lett. 98,
221103 (2011) R. N. Ghosh, I.
S. Wichman, C. A. Kramer and R. Loloee, "Time resolved
measurements of
pyrolysis and combustion products of PMMA",
accepted for publication in Fire and Materials (2012).. R. N. Ghosh, G.
L. Baker, C. Ruud and D. G. Nocera, “Fiber optic oxygen sensor
using molybdenum
chloride cluster luminescence”,
App.
Phys. Lett. 75,
2885-2887 (1999) R. Loloee, B.
Chorpening, S. Beer, R. N. Ghosh, "Hydrogen monitoring for
power plant
applications using SiC sensors", Sens. Actuators B. Chem. 129 (1), 200-210
(2008.) P. Tobias, B.
Golding and R. N. Ghosh, “Interface states in high temperature
gas sensors
based on silicon carbide”, IEEE Sensors J.,
3 (5), 543-7 (2003). R. N. Ghosh
& P. Tobias, “SiC field-effect devices operating at high
temperature”, J.
Elec. Mat., 34
(4), 345-350 (2005) M. S. Crosser,
S. H. Tessmer and R. N. Ghosh, “Scanning electric field
sensing for semiconductor
dopant profiling”, Appl. Surf. Sci. 195
(1-4), 146-154 (2002). R. N. Ghosh, C.
F. Kane, M. R. X. Barros, G. Nykolak, A. J. Bruce and P. C.
Becker, “8mW
Threshold Er3+-doped planar waveguide amplifier”, , IEEE Phot.
Tech. Lett. 8,
518-520, (1996). R. N. Ghosh and
R. H. Silsbee, “Spin dependent transport in a two-dimensional
electron gas”, R. N. Ghosh, B.
Griffing and J. M. Ballantyne“ Monolithic integration of GaAs
light-emitting
diodes and Si metal-oxide-semiconductor field-effect
transistors”, Appl. Phys.
Lett. 48 (5),
370-371, (1986). RECENT PATENTS G. L. Baker, R.
N. Ghosh & D. J. Osborn, "Sol-gel encapsulated hexanuclear
clusters
for oxygen sensing by optical techniques", US Patent 7,858,380
B2 (2010). R. N. Ghosh, R.
Loloee, P. A. Askeland
& C. Weeks
"Optical sensing system for oxygen monitoring in aqueous media
using
Molybdenum cluster phosphorescence" US Prov. Pat. 61/410,254
(filed Nov.
2010). G. J. Brereton,
H. J. Schock, R. N. Ghosh and F. M. Salam, “Sensors and method
for measurement
of flow rates and cumulative flow in ducts”, U. S. Patent #
6,408,698 B1
(2002). ADVISEES
Postgraduate:
M. S. Crosser,
P. Tobias, Honeywell,
Undergraduate: S. K. Kramer;
C. A. Kramer, J. Olds |