Department of Physics and Astronomy
Michigan State University
East Lansing, MI 48824-1116
Phone: (517) 884-5633
E-mail: mahanti@pa.msu.edu
Secretary: Ms. Cathy Cords
Phone: (517) 884-5512. Fax: (517) 353-4500.
Research Highlight
Effect of intrasite Coulomb interaction on the properties of pseudo-gap systems containing transition metals, Fe2VAl.
Phys. Rev. B 84, 125104 (2011)
Heusler compound Fe2VAl has been studied ab initially using DFT. The effect of intrasite Coulomb interaction is found important. The system is shown as narrow gap semiconductor instead of pseudo gap system as believed before.*(a) GGA (b) GGA+U (c) mBJ (d) PBE0
Gap formation in Cu3SbSe4

It is found that the gap formation in Cu3SbSe4 is sensitive to non-local exchange interaction and the structure relaxtion. The gap is found of 0.26 eV using HSE06 in very good agreement with experimental value of the band gap.
Surface effects in layered semiconductors Bi2Se3 and Bi2Te3
Phys. Rev. B 69, 085313, (2004).Surface effects in layered semiconductors Bi2Se3 and Bi2Te3
Phys. Rev. B 69, 085313, (2004).Deep Defect States in Narrow Band-Gap Semiconductors: In impurities in PbTe
Phys. Rev. Lett. 96, 056403, (2006).Phys. Rev. B 76, 115432, (2007).
Total density of states of PbTe with In impurity calculated using a cluster model. There are two types of defect states, Hyper-Deep Defect (HDS) and Deep Defect (DDS) states and their charge distribution.