Thermoelectric Nanostructures

In 1821, Thomas Seebeck observed that an electric current would flow continuously in a closed circuit made up of two dissimilar metals, if the metals were at different temperatures. Thus Seebeck discovered that electricity and the flow of thermal energy are closely connected. New nano-engineered materials have emerged with outstanding potential for greater thermoelectric performance. For these materials, understanding the effects of quantum confinement and the role played by defects is key. For example, many of the new materials are based on a quantum architure approach using bismuth telluride and bismuth selenide as the basic building blocks. Our research is focused on applying scanning probe techniques to test the basic physics at play in these systems.

The project involves a close collaboration with theoretical professor Prof. S.D. Mahanti. The figure below shows an example of our recent work.

Bi2Se3 Defect

(a) A 25 x 25 nm scanning tunneling microscopy image of a Bi2Se3 doped with excess bismuth. Striking clover shaped features are clearly present. (b) A 3.5 x 3.5 nm atomic resolution image of a similar sample. We see the exposed surface of selenium atoms. (c) A 3.5 x 3.5 nm image of the same area; this time the sample bias voltage is set near -0.5 V. We see an atomically resolved clover that clearly reflect electronic structure (as opposed to toporgraphy). We believe The feature reflects the way the surface electronic structure is perturbed by a subsurface defect. In this case, a Bi substitution 5 atomic layers below the surface gives rise to a resonant state that preferentially follows along chains of atomic p-orbitals. (d) Differential conductance spectra sampled at various distances from the center of the clover along one of the three leaves. The peak (red) is the resonance that forms the clovers. The horizontal axis gives the energy of the state with respect to the Fermi level.


Thermoelectric Papers:

Surface Effects in Layered Semiconductors Bi2Se3 and Bi2Te3, S. Urazhdin, D. Bilc, S. D. Mahanti, S. H. Tessmer, Theodora Kyratsi, and M. G. Kanatzidis, Phys. Rev. B. 69, 085313, 2004.

Scanning Tunneling Microscopy of Defect States in the Semiconductor Bi2Se3, S. Urazhdin, D. Bilc, S. H. Tessmer, S. D. Mahanti, Theodora Kyratsi, and M. G. Kanatzidis, Phys. Rev. B 66, 161306(R), 2002.