![S.D. Mahanti Dr. Mahanti's Photo](assets/images/mahanti.png)
Department of Physics and Astronomy
Michigan State University
East Lansing, MI 48824-1116
Phone: (517) 884-5633
E-mail: mahanti@pa.msu.edu
Secretary: Ms. Cathy Cords
Phone: (517) 884-5512. Fax: (517) 353-4500.
Research Highlight
Effect of intrasite Coulomb interaction on the properties of pseudo-gap systems containing transition metals, Fe2VAl.
Phys. Rev. B 84, 125104 (2011)![Full Heusler Crystal](assets/images/slideshow/fheusler_cryst.jpg)
![Fe2VAl band structure using different methods Fe2VAl band structures using different methods](assets/images/slideshow/fe2val_band.png)
*(a) GGA (b) GGA+U (c) mBJ (d) PBE0
Gap formation in Cu3SbSe4
![Se4 Crystal Structure](assets/images/slideshow/se4_cryst.png)
![Se4 Band Structure](assets/images/slideshow/se4_band.png)
Surface effects in layered semiconductors Bi2Se3 and Bi2Te3
Phys. Rev. B 69, 085313, (2004).Surface effects in layered semiconductors Bi2Se3 and Bi2Te3
Phys. Rev. B 69, 085313, (2004).Deep Defect States in Narrow Band-Gap Semiconductors: In impurities in PbTe
Phys. Rev. Lett. 96, 056403, (2006).Phys. Rev. B 76, 115432, (2007).
Total density of states of PbTe with In impurity calculated using a cluster model. There are two types of defect states, Hyper-Deep Defect (HDS) and Deep Defect (DDS) states and their charge distribution.