Ghosh Group Publications and Patents

Optics

R. N. Ghosh, P. A. Askeland, S. Kramer and R. Loloee, “Optical dissolved oxygen sensor utilizing molybdenum chloride cluster phosphorescence”, App. Phys. Lett. 98, 221103 (2011).  [PDF]

G. L. Baker, R. N. Ghosh and D. J. Osborn, "Sol-gel encapsulated hexanuclear clusters for oxygen sensing by optical techniques", US Patent 7,858,380 B2 (2010).  [PDF]

R. N Ghosh.; R. Loloee; S. P. Kramer; P. A. Askeland, C. T. Weeks, "Oxygen detection via nanoscale optical indicators" Sensors, 2009 IEEE, p. 2036-2038 (2009)
DOI: 10.1109/ICSENS.2009.5398279.  [PDF]

R. Loloee, P. A. Askeland and R. N. Ghosh, “Dissolved oxygen sensing in a flow stream using Molybdenum Chloride optical indicators”, Sensors, 2007 IEEE, p. 1404 – 1407 (2007)
DOI: 10.1109/ICSENS.2007.4388675  [PDF]

D. J. Osborn, G. L. Baker and R. N. Ghosh, “Mo₆Cl₁₂ incorporated sol-gel for oxygen sensing applications”, J. Sol-gel Sci. & Tech., 36 (1), p. 5-10 (2005).  [PDF]

P. Zhang, D. J. Osborn, G. L. Baker and R. N. Ghosh, “High temperature oxygen sensing using K₂Mo₆Cl₁₄ luminescence”, Sensors, 2005 IEEE, p. 628 – 631 (2005).
DOI: 10.1109/ICSENS.2005.1597777  [PDF]

R. N. Ghosh, G. L. Baker, C. Ruud and D. G. Nocera, “Fiber optic oxygen sensor using molybdenum chloride cluster luminescence”,  App. Phys. Lett. 75, p. 2885-2887 (1999)  [PDF]

 

Silicon Carbide & Semiconductors

R. N. Ghosh and R. Loloee, “Characterization of Large Area 4H-SiC and 6H-SiC Capacitive Devices at 600 °C”, Mat. Sci. Forum, Proc. ICSCRM 2011, paper 412 (2011).  [PDF]

Y. H. Kahng, W. Lu, R. G. Tobin, R. Loloee and R. N. Ghosh, “The role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh vacuum study”, J. Appl. Phys., 105, 064511 (2009).  [PDF]

R. N. Ghosh, R. Loloee, T. Isaacs-Smith and J. R. Williams, “High Frequency Inversion Capacitance Measurements for 6H-SiC n-MOS Capacitors from 450 to 600 °C”, Mat. Sci. Forum, 600-603, p. 739-742 (2009).
DOI: 10.4028/www.scientific.net/MSF.600-603.739  [PDF]

R. Loloee, B. Chorpening, S. Beer, and R. N. Ghosh, "Hydrogen monitoring for power plant applications using SiC sensors", Sens. Actuators B. Chem. 129 (1), p. 200-210 (2008).  [PDF]

R. N. Ghosh and R. Loloee, “Sensing requirements for real-time monitoring and control in energy production”, IEEE Sensors 2007, p. 612-615 (2007)
DOI:10.1109/ICSENS.2007.4388473.  [PDF]

Y. H. Kahng, R. G. Tobin, R. Loloee and R. N. Ghosh, “Sulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensor”, J. Appl. Phys., 102, 064505 (2007).  [PDF]

R. N. Ghosh, R. Loloee, T. Isaacs-Smith and J. R. Williams, “High Temperature Reliability of SiC n-MOS Devices up to 630 °C”, Mat. Sc. Forum 527-529, p. 1039-1042 (2006)
DOI: 10.4028/www.scientific.net/MSF.527-529.1039  [PDF]

R. N. Ghosh, P. Tobias, H. Hui and M. Koochesfahni, “Fast solid state gas sensor characterization technique”, Sensors, 2005 IEEE, p. 1411-1413 (2005)
DOI: 10.1109/ICSENS.2005.1597974  [PDF]

R. N. Ghosh and P. Tobias, “SiC field-effect devices operating at high temperature”, J. Elec. Mat., 34 (4), p. 345-350 (2005).  [PDF]

P. Tobias, B. Golding and R. N. Ghosh, “Interface states in high temperature gas sensors based on silicon carbide”, IEEE Sensors J., 3 (5), p. 543-7 (2003).  [PDF]

M. S. Crosser, S. H. Tessmer and R. N. Ghosh, “Scanning electric field sensing for semiconductor dopant profiling”, Appl. Surf. Sci. 195 (1-4), p. 146-154 (2002).  [PDF]

R. N. Ghosh, S. Ezhilvalavan, B. Golding, S. M. Mukhopadhyay, N. Mahadev, P. Joshi, M. K. Das, and J. A. Cooper, Jr., “Profiling of the SiO₂ - SiC Interface using x-ray Photoelectron Spectroscopy”, Mat. Res. Soc. Symp. Proc. 640, paper H3.7.1 (2001).  [PDF]

 

Fire Research

R. N. Ghosh, I. S. Wichman, C. A. Kramer and R. Loloee, "Time resolved measurements of pyrolysis and combustion products of  PMMA", accepted for publication in Fire and Materials (2012).

C. A. Kramer, R. Loloee, I. S. Wichman and R. N Ghosh, "Time-resolved measurements of pyrolysis products from thermoplastic poly-methyl-methacrylate (PMMA), Proc. ASME 2009 Int. Mech. Eng. Congress & Exposition, paper: IMECE2009-11256, p. 99-105 (2009).  [PDF]

R. N. Ghosh, R. Loloee, I. S. Wichman and C. A. Kramer, “Thermal and chemical identification of materials prior to combustion”, Sensors, 2009 IEEE, p. 774 – 776 (2009).
DOI: 10.1109/ICSENS.2009.5398532  [PDF]

 

Patents

G. L. Baker, R. N. Ghosh and D. J. Osborn, "Sol-gel encapsulated hexanuclear clusters for oxygen sensing by optical techniques", US Patent 7,858,380 B2 (2010).  [PDF]

G. J. Brereton, H. J. Schock, R. N. Ghosh and F. M. Salam, “Sensors and method for measurement of flow rates and cumulative flow in ducts”, U. S. Patent ” 6,408,698 B1 (2002).  [PDF]

 

Ghosh Publications

R. N. Ghosh, C. F. Kane, M. R. X. Barros, G. Nykolak, A. J. Bruce and P. C. Becker, “8-mW Threshold Er³⁺-doped planar waveguide amplifier”, IEEE Phot. Tech. Lett. 8, p. 518-520, (1996).  [PDF]

R. N. Ghosh, E.R. Williams, A. F. Clark and R. J. Soulen, “Cryogenic precision capacitance bridge using a single electron tunneling electrometer”, Physica B. 194, P. 1007-1008 (1994).
DOI: 10.1016/0921-4526(94)90833-8  [PDF]

R. N. Ghosh and R. H. Silsbee, “Spin dependent transport in a two-dimensional electron gas”, Sol. St. Comm. 81 (7), p. 545-548 (1992).  [PDF]

R. N. Ghosh and R. H. Silsbee, “Spin-spin scattering in a silicon two-dimensional electron gas”, Phys. Rev. B. 46 (19), p. 12508-12525 (1992).  [PDF]

E. R. Williams, R. N. Ghosh and J. M. Martinis, “Measuring the electron's charge and the fine-structure constant by counting electrons on a capacitor”, J. Res. Nat. Inst. Stand. Tec. 97 (2), p. 299-304 (1992).  [PDF]

R. N. Ghosh and R. H. Silsbee, “Accumulation layer n-channel MOSFET operating at 4K”, Cryogenics 30 (12), p. 1069-1073 (1990).  [PDF]

R. N. Ghosh, B. Griffing and J. M. Ballantyne“ Monolithic integration of GaAs light-emitting diodes and Si metal-oxide-semiconductor field-effect transistors”, Appl. Phys. Lett. 48 (5), p. 370-371 (1986).  [PDF]